Atomic Layer Deposition of High Permittivity Oxides: Film Growth and In Situ Studies
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چکیده
............................................................................................................................ 5 List of Publications............................................................................................................ 6 List of Acronyms Used ..................................................................................................... 7
منابع مشابه
High dielectrics on InGaAs and GaN - Growth, interfacial structural studies, and surface Fermi level unpinning
1. growth of high dielectric constant oxides on InGaAs and GaN using molecular beam epitaxy (MBE) and atomic layer deposition (ALD) 2. structural studies on hetero-structures of nano-thick Al2O3, HfO2, and Ga2O3(Gd2O3)/ InGaAs (and GaN) using high-resolution x-ray reflectivity using in-situ/ex-situ high-resolution synchrotron radiation and high-resolution transmission electron microscopy 3. cor...
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